The possibility of reducing the reflectance and improving the tribological behavior of Si wafer by UNSM technique

摘要

In this study, mono- and poly-crystalline Si wafers, which are widely used in the manufacturing of high-performance solar cells, and nano- and micro-electromechanical systems (NEMS/MEMS), were subjected to ultrasonic nanocrystalline surface modification (UNSM) technique. The reflectance property of mono-crystalline Si wafer was improved after UNSM treatment in a certain wavelength but it reduced remarkably for polycrystalline Si wafer. The hardness of both Si wafers was increased after UNSM treatment resulting in improvement of tribological behavior. According to the results of the present study, a UNSM technique might be considered as an alternative surface modification process to improve the properties of Si wafers for solar cell and NEMS/MEMS applications.