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Characterisation and properties of magnetron sputtered nanoscale bi-layered Ni/Ti thin films and effect of annealing

机译:磁控溅射纳米双层Ni / Ti薄膜的表征,性能及退火效应

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Single-bi-layer of Ni-Ti thin film was deposited using DC and RF magnetron sputtering technique by layer-wise deposition of Ni and Ti on Si(100) substrate in the order of Ni as the bottom layer and Ti as the top layer. The deposition of these amorphous as-deposited thin films was followed by annealing at 300 degrees C, 400 degrees C, 500 degrees C, and 600 degrees C temperature with 1-h annealing time for each to achieve crystalline thin films. This paper describes the fabrication processes and the novel characterization techniques of the as-deposited as well as the annealed thin films. Microstructures were analysed using FESEM and HRTEM. Nano-indentation and AFM were carried out to characterize the mechanical properties and surface profiles of the films. It was found that, for the annealing temperatures of 300 degrees C to 600 degrees C, the increase in annealing temperature resulted in gradual increase in atomic-cluster coarsening with improved ad-atom mobility. Phase analyses, performed by GIXRD, showed the development of silicide phases and intermetallic compounds. Cross-sectional micrographs exhibited the inter-diffusion between the two-layer constituents, especially at higher temperatures, which resulted either in amorphization or in crystallization after annealing at temperatures above 400 degrees C. Copyright (c) 2015 John Wiley & Sons, Ltd.
机译:使用DC和RF磁控溅射技术,通过在Ni(Si)(100)衬底上按Ni为底层,Ti为顶层的顺序逐层沉积Ni和Ti来沉积单层Ni-Ti薄膜。沉积这些非晶态沉积的薄膜之后,分别在300℃,400℃,500℃和600℃的温度下进行退火,退火时间分别为1小时,以获得结晶薄膜。本文介绍了沉积和退火薄膜的制备工艺和新颖的表征技术。使用FESEM和HRTEM分析微观结构。进行纳米压痕和原子力显微镜以表征薄膜的机械性能和表面轮廓。已经发现,对于300℃至600℃的退火温度,退火温度的升高导致原子团簇粗化的逐渐增加,并具有改善的原子迁移率。 GIXRD进行的相分析显示出硅化物相和金属间化合物的发展。横截面显微照片显示出两层成分之间的相互扩散,尤其是在较高温度下,这在高于400摄氏度的温度退火后导致非晶化或结晶。版权所有(c)2015 John Wiley&Sons,Ltd.

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