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Ni-Fe alloy sputtering target for forming magnetic thin films, magnetic thin film, and method of manufacturing the Ni-Fe alloy sputtering target

机译:用于形成磁性薄膜的Ni-Fe合金溅射靶,磁性薄膜以及制造该Ni-Fe合金溅射靶的方法

摘要

An NiFe alloy material suitable for forming a ferromagnetic NiFe alloy thin film is provided. The magnetic thin film produces a small number of particles during sputtering, and excels in corrosion resistance and magnetic properties. A method of manufacturing an NiFe alloy sputtering target used to make the thin film is also provided. In addition, an NiFe alloy sputtering target for forming magnetic thin films is provided. The sputtering target is characterized in that it has: an oxygen content of 50 ppm or less; an S content of 10 ppm or less; a carbon content of 50 ppm or less, and a total content of metal impurities other than the alloy components of 50 ppm or less. Such an NiFe alloy target can be produced by melting and alloying high-purity materials obtained by dissolving the raw materials in hydrochloric acid, and performing ion exchange, activated-charcoal treatment, and electrolytic refining.
机译:提供适合于形成铁磁性NiFe合金薄膜的NiFe合金材料。磁性薄膜在溅射过程中产生少量颗粒,并且在耐腐蚀性和磁性方面优异。还提供一种用于制造薄膜的NiFe合金溅射靶的制造方法。另外,提供了用于形成磁性薄膜的NiFe合金溅射靶。溅射靶的特征在于,氧含量为50ppm以下。 S含量为10ppm以下;碳含量为50ppm以下,合金成分以外的金属杂质的总含量为50ppm以下。这样的NiFe合金靶可以通过将通过将原料溶解在盐酸中而获得的高纯度材料熔融并使其合金化,并进行离子交换,活性炭处理和电解精制来制造。

著录项

  • 公开/公告号US2001032686A1

    专利类型

  • 公开/公告日2001-10-25

    原文格式PDF

  • 申请/专利权人 SHINDO YUICHIRO;SUZUKI TSUNEO;

    申请/专利号US20010871284

  • 发明设计人 YUICHIRO SHINDO;TSUNEO SUZUKI;

    申请日2001-05-31

  • 分类号H01F1/14;

  • 国家 US

  • 入库时间 2022-08-22 01:06:57

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