Investigation of the atomic interdiffusion and phase formation in ion beam-irradiated thin Cu-Al and Ag-Al multilayers by in situ RBS and XRD

摘要

Ion beam-induced interdiffusion and phase formation processes in thin Cu-Al and Ag-Al multilayers were investigated with in situ RES and X-ray diffraction (XRD), respectively. The metal layers were deposited by evaporation on polished glassy carbon and single-crystal silicon substrates. In order to initiate interdiffusion, the specimens were bombarded with high-current 2.0 MeV He-4(+) ion beams, Depending on the metal lager system, different interdiffusion and phase formation behaviour were observed (phases formed after irradiation: Al2Cu, Al4Cu9 and Ag2Al). Fast interdiffusion was measured for the Ag-Al and Cu-Al systems deposited on glassy carbon, whereas much lower interdiffusion was observed for the same multilayered systems deposited on [100] Si, even though the multilayers of each system were deposited at the same time. In addition, the interdiffusion was significantly slower in Cu-Al multilayers than in Ag-Al multilayers. (C) 1998 John Wiley & Sons, Ltd. [References: 37]