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Superconductivity of Mg-B layers prepared by a multi-energy implantation of boron into magnesium and magnesium into boron bulk substrates followed by the furnace and pulsed plasma annealing

机译:Mg-B层的超导性是通过多能量注入硼到镁中以及将镁注入到硼块状衬底中,然后进行熔炉和脉冲等离子体退火制备的

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B ions into Mg and Mg ions into B substrates were implanted in triple mode, i.e. each sample was sequentially implanted at three different energies starting from the highest one (80-150 keV range) to the lowest one (40-70 keV range). The energies and fluencies in each particular batch were simulated to yield a possibly large region in which the Mg:B ratio corresponds to stoichiometric MgB2 compound. These structures were next annealed using high intensity hydrogen plasma pulses of energy densities between 1.5 and 4.0 J/cm(2), or furnace annealed at 350-600 degrees C in a stream of flowing Ar-4%H-2 mixture. The simulated profiles were in fair agreement with those derived from the RBS measurements. Magnetically modulated microwave absorption (MMMA), magnetization and resistance measurements showed that the superconducting transition onset temperature T-c(onset) shifted from about 13 K in the best magnesium sample implanted with single-energy B ions, to 22-28 K for multi-energy implantation treatments. Respective shift in Mg-implanted boron samples was from about 33.3 K to 36.5 K. However, broadening of the transition to the superconducting state is observed for the multi-energy treatment in both cases. Possible reasons for these effects and proposed means to improve the method are discussed.
机译:将B离子注入Mg离子和将Mg离子注入B衬底中,以三重模式注入,即从最高的一个(80-150 keV范围)到最低的(40-70 keV范围)开始依次以三种不同的能量注入每个样品。模拟每个特定批次中的能量和通量,以产生可能较大的区域,其中Mg:B比对应于化学计量的MgB2化合物。接下来,使用能量密度在1.5和4.0 J / cm(2)之间的高强度氢等离子体脉冲对这些结构进行退火,或者在流动的Ar-4%H-2混合物流中于350-600摄氏度的温度对炉进行退火。模拟轮廓与从RBS测量得出的轮廓完全吻合。磁调制微波吸收(MMMA),磁化强度和电阻测量表明,超导转变起始温度Tc(起始)从植入单能B离子的最佳镁样品中的约13 K转变为多能22-28 K植入治疗。注入镁的硼样品的迁移分别从33.3 K到36.5K。但是,在两种情况下,对于多能量处理,都观察到过渡到超导状态的变宽。讨论了产生这些影响的可能原因以及改进该方法的建议方法。

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