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首页> 外文期刊>Surface & Coatings Technology >Optimal deposition and layer modulation parameters for mechanical property enhancement of TiB2/Si3N4 multilayers using orthogonal experiment
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Optimal deposition and layer modulation parameters for mechanical property enhancement of TiB2/Si3N4 multilayers using orthogonal experiment

机译:利用正交试验优化TiB2 / Si3N4多层材料力学性能的最佳沉积和层调制参数

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摘要

TiB2/Si3N4 multilayers have been synthesized by ion beam assisted deposition (IBAD). SEM, XRD, XP-2 profiler, and Nano indenter were employed to investigate the effect of modulation ratio, modulation period, thickness of buffer layer, and deposition temperature on the microstructure and mechanical properties. Orthogonal experiment found that the TiB2/Si3N4 multilayer with modulation ratio of 15.4:1 and modulation period of 11.8nm prepared with 38nm-thick Ti buffer layer at deposition temperature of 225°C displayed optimal mechanical properties. Its hardness and elastic modulus were up to the highest values of 36.2GPa and 448GPa. This hardest multilayer also showed the improved residual stress and fracture resistance.
机译:TiB2 / Si3N4多层膜是通过离子束辅助沉积(IBAD)合成的。用SEM,XRD,XP-2轮廓仪和纳米压头研究了调制比,调制周期,缓冲层厚度和沉积温度对显微组织和力学性能的影响。正交实验发现,采用38nm厚的Ti缓冲层在225°C的沉积温度下制备的调制比为15.4:1,调制周期为11.8nm的TiB2 / Si3N4多层膜表现出最佳的机械性能。其硬度和弹性模量最高达到36.2GPa和448GPa。该最硬的多层还显示出改善的残余应力和抗断裂性。

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