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Investigation of the Chemical Purity of Silicon Surfaces Reacted with Liquid Methanol

机译:液态甲醇与硅表面反应的化学纯度研究

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The reaction of hydrogen-terminated Si(111) and oxide-terminated silicon surfaces with neat anhydrous liquid methanol (CH3OH) has been studied with Fourier transform infrared spectroscopy (FTIR) as a function of solution temperature and immersion time. At 65 °C, reaction of atomically smooth H—Si(111) surfaces with CH3OH (1) results in partially methoxylated silicon surfaces that are free of any detectable subsurface oxidation (Si—O—Si bonds); this is in contrast to observable oxidation found after similar reactions on H—Si(100) surfaces. At long reaction times (t > 3 h), the Si(111) surface saturates with Si-OCH3 sites at a coverage of approximately 30% of a monolayer, with the residual ~70% comprised of unreacted Si—H sites. The lack of any detectable silicon oxide makes it possible to conclude the following: (i) Reaction mechanisms involving insertion of oxygen atoms from the CH3OH molecule into the subsurface Si—Si back bonds cannot be dominant for (111)-oriented silicon under these conditions, (ii) The vibrational modes of the oxide-free surface are very sharp and can be clearly distinguished from blue-shifted modes observed for methoxyl groups chemisorbed on oxidized surfaces. For surfaces that display subsurface oxidation, no evidence for oxygen atoms directly below atop Si—H sites has been observed. Instead, FTIR analysis demonstrates that subsurface oxidation selectively exists underneath atop Si-OCH3 sites. Finally, H-terminated oxide surfaces, prepared by reacting trichlorosilanes on OH-terminated SiO2 surfaces, react with methanol to form a methoxy-terminated oxide surface.
机译:用傅立叶变换红外光谱(FTIR)研究了氢封端的Si(111)和氧化物封端的硅表面与纯净无水液态甲醇(CH3OH)的反应,该反应是溶液温度和浸入时间的函数。在65°C下,原子光滑的H-Si(111)表面与CH3OH(1)的反应导致部分甲氧基化的硅表面没有任何可检测到的亚表面氧化(Si-O-Si键);这与在H-Si(100)表面进行类似反应后发现的可观察到的氧化相反。在较长的反应时间(t> 3 h)下,Si(111)表面的Si-OCH3位点饱和,覆盖率约为单层的30%,剩余的约70%由未反应的Si-H位点组成。缺少任何可检测到的氧化硅使得可以得出以下结论:(i)在这些条件下,涉及将CH3OH分子中的氧原子插入到表面Si-Si背键中的反应机理对于(111)取向的硅来说不是主要的(ii)无氧化物表面的振动模式非常尖锐,并且可以与化学吸附在氧化表面上的甲氧基所观察到的蓝移模式清楚地区分开。对于显示出亚表面氧化的表面,没有观察到直接在Si-H位置下方的氧原子的证据。取而代之的是,FTIR分析表明,在Si-OCH3部位的顶部下方选择性存在亚表面氧化。最后,通过使三氯硅烷在OH末端的SiO2表面反应制备的H末端的氧化物表面与甲醇反应形成甲氧基封端的氧化物表面。

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