DEPOSITION OF HIGH-PURITY SILICON VIA HIGH-SURFACE AREA GAS-SOLID OR GAS-LIQUID INTERFACES AND RECOVERY VIA LIQUID PHASE

摘要

PROBLEM TO BE SOLVED: To provide a method which overcomes both the limitations of low deposition surface area per reactor and long changeover procedures associated with existing so-called Siemens reactors while still meeting the necessary purity requirements for the recovered silicon.;SOLUTION: A method for producing high-purity silicon comprises steps of: a. preparing plates having a geometry chosen to increase surface area toward the theoretical maximum relative to the volume of space occupied by the vertically oriented deposition plates; b. placing the plates in a reactor vessel 300; c. flowing a pressurized hydrogen gas and liquid silane into the reactor vessel, and the vertically oriented deposition plates 50 are heated to a temperature to optimize the reduction reaction of trichlorosilane to deposit silicon, and thereafter heated to a surface temperature exceeding the melting point of reduced silicon; and d. removing the liquid reduced silicon from the vertically oriented deposition plates 50 by letting the liquid reduced silicon drop from saw-tooth like bottom ends to form droplets.;COPYRIGHT: (C)2014,JPO&INPIT