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首页> 外文期刊>The journal of physical chemistry, C. Nanomaterials and interfaces >DFT study of selective alpha-fluoride elimination of adsorbed CF3(ads) on both ag(111) and cu(111) surfaces
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DFT study of selective alpha-fluoride elimination of adsorbed CF3(ads) on both ag(111) and cu(111) surfaces

机译:DFT研究选择性消除ag(111)和cu(111)表面上吸附的CF3(ads)的α氟化物

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摘要

Total-energy calculations based on (1) density functional theory (DFT) in connection with ultrasoft pseudopotential (USP) and generalized gradient spin-polarized approximation (GGSA), (2) the partial structural constraint path minimization (PSCPM) method, and (3) an analysis tool of the partial density of states (PDOS) have been used to investigate the possible energetic profile for the selective activation of C-F bonds, that is, the single a-fluoride elimination of adsorbed CF3(ads) on both Cu(111) and Ag(111) surfaces leading to adsorbed CF2(ads) and F-(ads) on both surfaces. Following our proposed most possible reaction pathway, namely, the diffusion of the hcp-hollow site of CF3(ads) toward the top site accompanied by the single a-fluoride elimination to form the fcc-hollow site of F(ad,), our calculated. energy barrier on the Ag(111) surface is significantly larger than (similar to 0.462 eV) that on the Cu(111) surface. We attribute this unusual hi.-h-energy barrier for the single a-fluoride elimination of adsorbed CF3(ads) to forming a productlike distorted transition-state structure on the Ag(111) surface, that is, the larger stretching of a C-F bond and the larger distortion of bond lengths of Ag-Ag on the Ag(111) surface, in comparison with a less energy barrier to forming a reactant-like distorted transition-state structure on the Cu(111) surface, that is, smaller stretching of a C-F bond and smaller distortion of bond lengths of Cu-Cu on the Cu(111) surface. Consequently, the single a-fluoride elimination of adsorbed CF3(ads) to form adsorbed CF2(ads) and F-(ads) leading to the formation of CD2CF2(g), CD2=CD2(g), and CF2 = CF2(g) through coupling reactions with CD2(ads) coadsorbed on the Ag(111) surface will be suppressed by the methylene (CD2) insertion into the Ag-CF3(ads) bond with CD2(ads) coadsorbed on the Ag(111) surface to initially form adsorbed Ag-CD2CF3(ads) and to continually form CD2=CF2(g) through the beta-fluoride elimination on the same surface. Finally, our calculated surface electronic states, that is, PDOS, of both Cu(111) and Ag(111) surfaces and our calculated bonding nature, that is, PDOS, of both carbon and fluorine within adsorbed CF3(ads) on the same surfaces at their different transition-state structures, that is, reactant-like on Cu(111) versus productlike on Ag(111), are investigated to obtain further insight into the effect of both surface electronic states and C-F bond strength on their different reactivity for the single alpha-fluoride elimination of adsorbed CF3(ads) on both surfaces.
机译:基于(1)结合超软伪电势(USP)和广义梯度自旋极化近似(GGSA)的密度泛函理论(DFT),(2)部分结构约束路径最小化(PSCPM)方法和( 3)已使用部分状态密度分析工具(PDOS)研究了CF键选择性激活的可能能量分布,即通过单个a氟化物消除了两个Cu( 111)和Ag(111)表面导致两面都吸附CF2(ads)和F-(ads)。遵循我们提出的最可能的反应途径,即CF3(ads)的hcp空心位点向顶部扩散,并通过单个a氟化物消除形成F(ad,)的fcc空心位点,计算。 Ag(111)表面的能垒显着大于Cu(111)表面的能垒(约0.462 eV)。我们将这种异常的高-h-能垒归因于单个CF消除吸附的CF3(ads)导致在Ag(111)表面上形成了类似产物的扭曲过渡态结构,即CF的拉伸更大与在Cu(111)表面上形成类似反应物的畸变过渡态结构的能垒较小的Ag(111)表面上的Ag-Ag键和较大的键长畸变相比CF键的拉伸和Cu(111)表面上Cu-Cu键长度的较小变形。因此,单个a氟化物消除了吸附的CF3(ads),形成了吸附的CF2(ads)和F-(ads),导致形成CD2CF2(g),CD2 = CD2(g)和CF2 = CF2(g )通过与共吸附在Ag(111)表面上的CD2(ads)的偶联反应将被亚甲基(CD2)插入与共吸附在Ag(111)表面上的CD2(ads)的Ag-CF3(ads)键中抑制。最初形成吸附的Ag-CD2CF3(ads),并通过在同一表面上消除β-氟化物连续形成CD2 = CF2(g)。最后,我们计算出的Cu(111)和Ag(111)表面的表面电子态,即PDOS,以及我们计算出的在同一CF3(ads)上吸附的碳和氟的键合性质,即PDOS,表面在其不同的过渡态结构,即类似反应物在Cu(111)上与类似产物在Ag(111)上,以进一步了解表面电子态和CF键强度对它们不同反应性的影响单氟消除两个表面上吸附的CF3(ads)。

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