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A class IV charge model for molecular excited states

机译:分子激发态的IV类电荷模型

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摘要

We present a new parameterization for calculating class IV charges for molecules containing H. C, N, O F, Si, P, S, Cl, Br, and I from wave functions calculated at the intermediate-neglect-of-differential-overlap-for-spectroscopy (INDO/S) level. First we readjust the oxygen parameters in INDO/S on the basis of electronic excitation energies; this yields a new set of parameters called INDO/S2. Then we parameterize the charge model. The new model, called charge model 2 for INDO/S2 (CM2/INDO/S2), is parameterized against the most accurate available data from both ab initio and experimental sources for dipole moments of ground and excited electronic states. For a training set containing 211 dipole moments of molecules in their ground states and 33 dipole moments of molecules in their first excited states, the CM2/INDO/S2 model leads to a root-mean-square (rms) error in dipole moments of 0.26 D for ground states and 0.40 D for the excited states. The new model, INDO/S2 with CM2, systematically improves the n->#pi#~* excitation energies and the dipole moments of the excited states of carbonyl compounds. We also parameterized a CM2 model for the standard INDO/S model (CM2/INDO/S), which predicts quite accurate dipole moments for ground states with an rms error of 0.24 D.
机译:我们提出了一种新的参数化方法,用于根据在差值重叠的中间忽略时计算出的波动函数来计算含H. C,N,OF,Si,P,S,Cl,Br和I的分子的IV类电荷光谱(INDO / S)水平。首先,我们根据电子激发能重新调整INDO / S中的氧气参数。这将产生一组称为INDO / S2的新参数。然后我们对收费模型进行参数化。新模型称为INDO / S2(CM2 / INDO / S2)电荷模型2,针对从地面和受激电子态的偶极矩从头算和实验源获得的最准确的可用数据进行了参数化。对于包含211个处于基态的分子偶极矩和33个处于其第一激发态的分子偶极矩的训练集,CM2 / INDO / S2模型的偶极矩均方根(rms)误差为0.26 D为基态,0.40 D为激发态。带有CM2的新模型INDO / S2可以系统地改善n->#pi#〜*激发能和羰基化合物激发态的偶极矩。我们还为标准INDO / S模型(CM2 / INDO / S)参数化了CM2模型,该模型预测了基态的相当精确的偶极矩,均方根误差为0.24D。

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