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Photodetachment photoelectron spectroscopy of doubly charged anions: S_2O_8~(2-)

机译:双电荷阴离子S_2O_8〜(2-)的光解光电子能谱

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A photodetachment photoelectron spectroscopy study of a doubly charged anion (S_2O_8~(2-)) in the gas phase is reported at three photon energies: 193, 266, 355 nm. Adiabatic and vertical electron binding energies of S_2O_8~(2-) were measured to be 1.7 +- 0.2 and 2.2 +- 0.1 eV, respectively. Several excited states were observed for the S_2O_8~- singly charged anion at 193 nm. The repulsive Coulomb barrier that binds multiply charged anions was clearly shown in the detachment spectra of S_2O_8~(2-). The effects of the Coulomb barrier to the detachment spectra and electron tunneling through the barrier are presented. The barrier height, which is equivalent to the magnitude of the Coulomb repulsion between the two excess charges in S_2O_8~(2-) was estimated to be approx 3 eV.
机译:在三种光子能量:193、266、355 nm处,对气相中双电荷阴离子(S_2O_8〜(2-))进行了光解光电子能谱研究。 S_2O_8〜(2-)的绝热和垂直电子结合能分别为1.7±0.2和2.2±0.1 eV。在193 nm处观察到S_2O_8-单电荷阴离子的几个激发态。在S_2O_8〜(2-)的脱离光谱中清楚地显示了结合多电荷阴离子的排斥性库仑势垒。给出了库仑势垒对分离光谱和电子穿过势垒的影响。势垒高度估计等于S_2O_8〜(2-)中两个多余电荷之间的库仑排斥力的大小,约为3 eV。

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