Effects of wafer curvature caused by film stress on the chemical mechanical polishing process

摘要

A theoretical model based on two-body contact theory is established to simulate the contact pressure distribution arising from wafer curvature which is caused by film stress during CMP process. Both wafer and pad deformations during the contact process are considered. The profiles of the contact pressure distribution for wafers with different curvature radius are simulated. The influences of wafer curvature on mean removal rate and within wafer removal rate nonuniformity (WIWNU) are simulated and compared with the experimental data. According to the two-body contact model, when the pad is in contact completely with the wafer, the profile of the contact pressure has almost the same trend whether the wafer has an upward or a downward curvature. The mean value of the contact pressure will increase with increasing of radius of downward curvature. WIWNU will decrease with increasing pre-polish wafer bow from concave (upward curvature) to convex (downward curvature). The results from the simulation correlated with the experimental data and demonstrated the validity of the model. The results are helpful for controlling and reducing the wafer to wafer removal rate nonuniformity and within wafer removal rate nonuniformity in CMP.