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首页> 外文期刊>The European physical journal, B. Condensed matter physics >Atomistic level studies on the tensile behavior of GaN nanotubes under uniaxial tension
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Atomistic level studies on the tensile behavior of GaN nanotubes under uniaxial tension

机译:单轴拉伸下GaN纳米管拉伸行为的原子水平研究

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Molecular dynamics method with the Stillinger-Weber (SW) potential has been employed to study the responses of GaN nanotubes (GaNNTs) to a uniaxial tensile load along the axial direction. It has been revealed that GaNNTs exhibits a completely different tensile behavior at different temperatures, i.e. ductility at higher deformation temperatures and brittleness at lower temperatures, leading to a brittle to ductile transition (BDT). Both the BDT temperature and the critical stress increases with increasing thickness of GaNNTs, and the critical stress at higher temperature are lower than those at lower temperature. These results on the tensile behaviors of GaNNTs in an atomic level will provide a good reference to its promising applications.
机译:已经采用具有斯蒂林格-韦伯(SW)势的分子动力学方法来研究GaN纳米管(GaNNT)对沿轴向单轴拉伸载荷的响应。已经发现,GaNNT在不同温度下表现出完全不同的拉伸行为,即在较高变形温度下的延展性和在较低温度下的脆性,导致脆性至延性转变(BDT)。 BDT温度和临界应力都随GaNNTs厚度的增加而增加,并且较高温度下的临界应力低于较低温度下的临界应力。这些有关GaNNTs在原子水平上的拉伸行为的结果将为其有前途的应用提供很好的参考。

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