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Photoemission study of the carrier bands in Bi(111)

机译:Bi(111)中载带的光发射研究

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摘要

We present high*resolution photoemission data from the Bi(111)-surface. The electronic structure of the semimetal close to the Fermi level has been found to change dramatically with respect to the well established bulk band structure. The Fermi surfaces observed for the electron and hole bands resemble those of the next group-V element, antimony, probably as a consequence of surface relaxation. This results in a relatively high surface charge density. The observed temperature dependence of the electron Fermi energy confirms this result.
机译:我们提出了来自Bi(111)-表面的高分辨率光发射数据。已经发现,相对于完善的体能带结构,接近费米能级的半金属的电子结构发生了巨大变化。观察到的电子和空穴带的费米表面类似于下一个V组元素的锑,可能是表面弛豫的结果。这导致相对较高的表面电荷密度。观察到的电子费米能量的温度依赖性证实了这一结果。

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