首页> 外文期刊>The European physical journal, B. Condensed matter physics >Charge density and conductivity of disordered Berry-Mondragon graphene nanoribbons
【24h】

Charge density and conductivity of disordered Berry-Mondragon graphene nanoribbons

机译:无序Berry-Mondragon石墨烯纳米带的电荷密度和电导率

获取原文
获取原文并翻译 | 示例
           

摘要

We consider gated graphene nanoribbons subject to Berry-Mondragon boundary conditions in the presence of weak impurities. Using field-theoretical methods, we calculate the density of charge carriers (and, thus, the quantum capacitance) as well as the optical and DC conductivities at zero temperature. We discuss in detail their dependence on the gate (chemical) potential, and reveal a non-linear behaviour induced by the quantization of the transversal momentum.
机译:我们认为在存在弱杂质的情况下,门控石墨烯纳米带会受到Berry-Mondragon边界条件的影响。使用场论方法,我们计算了零温度下的电荷载流子的密度(因此,量子电容)以及光学和直流电导率。我们详细讨论了它们对栅极(化学)电势的依赖性,并揭示了由横向动量量化引起的非线性行为。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号