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A first-principles study on the helium doped grain boundary in metal Al

机译:铝中氦掺杂晶界的第一性原理研究

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摘要

The He doped Al Σ3 grain boundary (GB) is investigated by using a first principles method. The segregation energy and elastic coefficient of He doped Al Σ3 GB are calculated. The theoretical tensile tests on the He + Σ3 GB are implemented and the calculated stress-strain curve shows that He doping will reduce the strength of the material and induces a double stress maxima effect in the fracture process. The bondlength and charge distribution analysis indicate that the reducing strength of the He-doped GB model can be attributed to the weak interaction of the Al-He bond and the weakening of the Al-Al bond nearby the He atom.
机译:利用第一原理方法研究了He掺杂的AlΣ3晶界(GB)。计算了掺He的铝Σ3GB的偏析能和弹性系数。对He +Σ3GB进行了理论拉伸试验,计算出的应力-应变曲线表明,掺He将降低材料的强度,并在断裂过程中产生最大的双重应力效应。键长和电荷分布分析表明,He掺杂的GB模型的还原强度可归因于Al-He键的弱相互作用和He原子附近的Al-Al键的弱化。

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