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Selective plasma etching treatment of the screen-printed carbon nanotube cold cathode

机译:丝网印刷碳纳米管冷阴极的选择性等离子体刻蚀处理

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摘要

A high-precision printing and patterning carbon nanotube (CNT) cathode was prepared using the screen-printing method. Selective plasma etchings were introduced to improve field emission properties of the CNT cathode through the reactive ion etching (RIE) system. The field emission characteristics and mechanism of the cathode after etching treatment were studied. It was found that the reactive ion etching could effectively expose plentiful CNTs inside the cathode and protrude them from the surface. Moreover, with the increase of RIE operation pressure, CNT cathode field emission behavior changed from metal-insulation medium-vacuum (MIV) to a classical metallic-microprotrusion (MM) structure field emission model. The results showed that only the cathode with appropriate RIE operation pressure etching has a low operation field and a high emission current density.
机译:使用丝网印刷方法制备了高精度的印刷和图案化碳纳米管(CNT)阴极。引入选择性等离子体蚀刻以通过反应离子蚀刻(RIE)系统改善CNT阴极的场发射性能。研究了蚀刻处理后阴极的场发射特性和机理。发现反应性离子蚀刻可以有效地暴露阴极内部的大量CNT,并将其从表面突出。此外,随着RIE操作压力的增加,CNT阴极场发射行为从金属绝缘介质真空(MIV)变为经典的金属微凸起(MM)结构场发射模型。结果表明,仅具有适当的RIE操作压力蚀刻的阴极具有低的操作场和高的发射电流密度。

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