The potential of simultaneous to etching deposition for surface roughness control is investigated with a stochastic modeling framework for morphology evolution in (2+1) d. It is predicted that ion-driven etching under simultaneous deposition of etch-inhibitors (e.g., impurities coming from the wafer surroundings, the reactor walls, or the plasma bulk) not only induces roughness formation with a linear dependence on time, but can also induce periodic dots on the surface. The surface roughness can be controlled by regulating the amount of etch-inhibitors.
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