Influence of annealing temperature of ZnO layer on synthesizing low dimensional GaN nanostructured materials

摘要

As-grown ZnO thin. lms are annealed in O-2 ambient for 15 min at the temperature of 700 degrees C, 800 degrees C, 900 degrees C and 1000 degrees C, respectively. Then the Ga2O3 thin. lms are deposited on ZnO/Si(111) substrates by sputtering Ga2O3 target in a JCK-500A radio frequency magnetron sputtering system. The low dimensional GaN nanostructured materials are obtained on Si substrates by ammoniating the Ga2O3/ZnO films at 950 degrees C for 15 min in a quartz tube. X-ray di. raction (XRD), Scanning electron microscope (SEM), Fourier transform infrared spectrophotometer ( FTIR) and photoluminescence ( PL) are used to analyze the structure, morphology and optical properties of GaN nanostructured. lms. The results show that their properties are investigated particularly as a function of annealing temperature of ZnO layer. The mechanism is also briefly discussed.