The silicon-based roadmap (International Technology Roadmap for Semiconductors, ITRS), provides a pathway for silicon-based technology until approx 2020. Success is heavily dependent dielectric layer (and gate electrode) is one of the most critical issues. Whether grown by MOCVD, MBE, ALD, or thermally, ultrathin dielectric films can be achieved only with the highest control of the initial surface chemical configuration and the process itself. This will be accomplished through the tools and techniques of surface science and the creativity of materials scientists.
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