G1-COPPER INTERCONNECTIONS, LOW-K INTER-LEVEL DIELECTRICS, AND NEW CONTACT METALLURGIES/STRUCTURES

摘要

This symposium is aimed at bringing together scientists and technologists engaged in the development and practice of all aspects of multi-level-metal (MLM) interconnections using copper and low-k dielectric films used in sub 0.13 ?m devices and circuits. Three focus areas are planned: 1. copper interconnections, 2. low k materials for inter-level dielectrics (ILD), and 3. new contact metallurgies and structures. Some suggested topics in these areas include: 1. methods and equipment for copper deposition: electrolytic and electroless plating, CVD, collimated, and force-fill PVD, 2. barrier and adhesion films and deposition methods (e.g. ionized PVD, atomic layer, and other novel techniques) for copper wiring, 3. planarization methods including chemical-mechanical polishing (CMP) of damascene and dual damascene structures, slurry composition and performance, and CMP process control, other novel methods; 4. reactors and processes for plasma etching copper patterns, 5. process integration issues, 6. reliability, electromigration, and migration resistance of copper and copper alloys, 7. low k inorganic and organic materials such as fluorinated oxides and polymers, spin-on-glasses, aerogels, nanofoams, and airgaps, 8. low k film deposition and plasma etching methods for damascene and dual damascene applications, 9. reliability of low k materials such as stability and reliability, resistance to copper diffusion; 10. stress migration, mechanical and thermal stressing in MLM wiring with copper/alloys, and low k ILD films; 11. new contact metallurgies; and 12. suicide and metal cladding processes for shallow junction and short channel gate structures.