Metal-buried HBT

摘要

Associate Prof. Miyamoto et al. of Tokyo Institute of Technology made on a trial basis the hetero bipolar transistor with the indium phosphorus metal buried (BMHBT) and succeeded in demonstrating its operation. They buried a stripe type of metallic electrodes in the collector layer in the same width as the emitter with a small size and enabled the capacity of the base collector to reduce to 1/5 of the conventional one. The trial BM-HBT is an HBT that uses gallium indium arsenic/indium phosphorus. They buried the tungsten metal as the collector electrode in a stripe fashion aiming at fundamentally reducing the junction area between the base and collector.