Modeling of InP HBTs with an Improved Keysight HBT Model

摘要

An accurate and flexible large-signal model based on an analysis of the characteristics of InP heterojunction bipolar transistors (HBT) is implemented as a seven-port symbolically defined device (SDD) in Keysight ADS. The model is based on an improved Keysight HBT model formulation, avoiding an erroneous RCICBC transit time contribution from the intrinsic collector region. The model has been verified by comparing simulated and measured DC and small-signal S-parameters at multiple bias points for a 1 x 15 mu m(2) emitter InP HBT.