Photovoltaic X-ray detectors made of CdTe crystals with a p-n junction

摘要

X-ray detectors made of CdTe crystals with a p-n junction obtained by diffusion of In into p-CdTe are investigated. The basic characteristics of such a detector are studied for the first time. It is found that the device is highly sensitive to X rays at a low bias voltage (to -50 V) and the X-ray effective energy in the range 28-72 keV. It is shown that photovoltaic detectors based on CdTe with p-n junctions are superior to Cd_(0.9)Zn_(0.1)Te ones.