Electrophysical Properties of GaAs Layers and the Characteristics of Fast Particle GaAs Detectors

V. A. Bespalov; A. V. Vorontsov; A. A. Gorbatsevich; V. I. Egorkin; G. P. Zhigalskii; E. A. Ilichev; A. V. Kulakov; B. G. Nalbandov; V. S. Pantuev; V. N. Rasputnyi

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Electrophysical Properties of GaAs Layers and the Characteristics of Fast Particle GaAs Detectors

机译：GaAs层的电物理性质和快速粒子GaAs探测器的特性

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Results of complex experiments aimed at finding a relationship between the properties of initial GaAs single-crystal wafers and epitaxial films and the threshold spectrometric characteristics of ionizing radiation detectors are reported.

机译：报道了旨在发现初始GaAs单晶晶片和外延膜的特性与电离辐射探测器的阈值光谱特性之间关系的复杂实验结果。

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《Technical physics》 |2004年第3期|共8页
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V. A. Bespalov; A. V. Vorontsov; A. A. Gorbatsevich; V. I. Egorkin; G. P. Zhigalskii; E. A. Ilichev; A. V. Kulakov; B. G. Nalbandov; V. S. Pantuev; V. N. Rasputnyi;
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正文语种 eng
中图分类物理学;
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1. Electrophysical Properties of GaAs Layers and the Characteristics of Fast Particle GaAs Detectors [J] . V. A. Bespalov, A. V. Vorontsov, A. A. Gorbatsevich, Technical physics . 2004,第3期

机译：GaAs层的电物理性质和快速粒子GaAs探测器的特性
2. Tailoring the optical properties of InAs/GaAs quantum dots by means of GaAsSb, InGaAs and InGaAsSb strain reducing layers [J] . Salhi A., Alshaibani S., Ilahi B., Journal of Alloys and Compounds: An Interdisciplinary Journal of Materials Science and Solid-state Chemistry and Physics . 2017,第期

机译：通过Gaassb，IngaAs和Ingaassb应变减少层纵向InAs / GaAs量子点的光学性质
3. Effect of (1 0 0) GaAs substrate misorientation on electrophysical parameters, structural properties and surface morphology of metamorphic HEMT nanoheterostructures InGaAs/InAlAs [J] . G.B. Galiev, I.S. Vasilevskii, E.A. Klimov, Journal of Crystal Growth . 2014,第apra15期

机译：（1 0 0）GaAs衬底取向错误对变质HEMT纳米异质结构InGaAs / InAlAs的电物理参数，结构性质和表面形态的影响
4. Structural and electrophysical properties of pseudomorphic GaAs/InGaAs/GaAs quantum wells: effect of thin central AlAs barrier [C] . Ivan S. Vasilevskii, Vladimir A. Kulbachinskii, Andrei A. Lomov, Conference on Micro- and Nanotechnologies . 2006

机译：假晶GaAs / InGaAs / GaAs量子阱的结构和电神法性质：薄中枢屏障的影响
5. Synthesis, optical properties and ultrafast electronic relaxation of layered semiconductor nanoparticles: Lead iodide, bismuth iodide, bismuth sulfide. [D] . Sengupta, Archita. 2000

机译：层状半导体纳米粒子的合成，光学性质和超快电子弛豫：碘化铅，碘化铋，硫化铋。
6. Plasmonic-Layered InAs/InGaAs Quantum-Dots-in-a-Well Pixel Detector for Spectral-Shaping and Photocurrent Enhancement [O] . Jehwan Hwang, Zahyun Ku, Jiyeon Jeon, 2020

机译：等离子体层叠InAs / InGaAS量子点 - 孔阱像素检测器用于光谱 - 整形和光电流增强
7. Planar, linear GaAs detector-amplifier array with an insulating AlGaAs spacing layer between the detector and transistor layers [O] . G.W. Anderson, N.A. Papanicolaou, D.I. Ma, 1988

机译：平面，线性GaAs检测器放大器阵列，具有探测器和晶体管层之间的绝缘藻类间距层

Electrophysical Properties of GaAs Layers and the Characteristics of Fast Particle GaAs Detectors

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