Aluminum nitride on silicon: Role of silicon carbide interlayer and chloride vapor-phase epitaxy technology

摘要

A new approach to the deposition of aluminum nitride (AlN) layers with thicknesses ranging within ~0.1-10 μm on silicon single crystal substrates by hydride-chloride vapor-phase epitaxy (HVPE) has been developed and implemented, which involves the formation of thin (~100-nm-thick) intermediate silicon carbide (3C-SiC) interlayers. It is established that wavy convex bands with a height of about 40 nm are present on the surface of as-grown AlN layers, which are situated at the boundaries of blocks in the layer structure. It is suggested that the formation of these wavy structures is related to morphological instability that develops due to accelerated growth of AlN at the block boundaries. Experiments show that, at low deposition rates, AlN layers grow according to a layer (quasi-two-dimensional) mechanism, which allows AlN layers characterized by half-widths (FWHM) of the X-ray rocking curves of (0002) reflections about ω_θ = 2100 arc sec to be obtained.