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Micromachined ultrasound transducers with improved coupling factors from a CMOS compatible process

机译:通过CMOS兼容工艺改善耦合因子的微加工超声换能器

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摘要

For medical high frequency acoustic imaging purposes the reduction in size of a single transducer element for one-dimensional and even more for two-dimensional arrays is more and more limited by fabrication and cabling technology. In the fields of industrial distance measurement and simple object recognition low cost phased arrays are lacking. Both problems can be solved with micromachined ultrasound transducers (MUTs). A single transducer is made of a large number of microscopic elements. Because of the array structure of these transducers, groups of elements can be built up and used as a phased array. By integrating parts of the sensor electronics on chip, the cabling effort for arrays can be reduced markedly. In contrast to standard ultrasonic technology, which is based on massive thickness resonators, vibrating membranes are the radiating elements of the MUTs. New micromachining technologies have emerged, allowing a highly reproducible fabrication of electrostatically driven membranes with gap heights below 500 nm. A microelectronic BiCMOS process was extended for surface micromechanics (T. Scheiter et al., Proceedings 11th European Conference on Solid-State Transducers, Warsaw, Vol.3, 1997, pp.1595-1598). Additional process steps were included for the realization of the membranes which form sealed cavities with the underlying substrate. Membrane and substrate are the opposite electrodes of a capacitive transducer. The transducers can be integrated monolithically on one chip together with the driving, preamplifying and multiplexing circuitry, thus reducing parasitic capacities and noise level significantly. Owing to their low mass the transducers are very well matched to fluid loads, resulting in a very high bandwidth of 50-100% (C. Eccardt et al., Proceedings Ultrasonics Symposium, San Antonio, Vol.2, 1996, pp. 959-962; P.C. Eccardt et al., Proceedings of the 1997 Ultrasonics Symposium, Toronto, Vol.2, 1997, pp. 1609-1618). In the following it is shown how the BiCMOS process has been modified to meet the demands for ultrasound generation and reception. Bias and driving voltages have been reduced down to the 10 V range. The electromechanical coupling is now almost comparable with that for piezoelectric transducers. The measurements exhibit sound pressures and bandwidths that are at least comparable with those of conventional piezoelectric transducer arrays.
机译:为了医学高频声成像的目的,对于一维阵列以及甚至对于二维阵列而言,单个换能器元件的尺寸减小越来越受到制造和布线技术的限制。在工业距离测量和简单目标识别领域,缺乏低成本的相控阵。这两个问题都可以用微机械超声换能器(MUT)解决。单个换能器由大量显微元件制成。由于这些换能器的阵列结构,可以建立一组元素并将其用作相控阵。通过将部分传感器电子设备集成在芯片上,可以显着减少阵列的布线工作量。与基于超大厚度谐振器的标准超声技术相比,振动膜是MUT的辐射元件。已经出现了新的微加工技术,可以高度可重复地制造间隙高度低于500 nm的静电驱动膜。微电子BiCMOS工艺被扩展到表面微力学(T.Scheiter等人,Proceedings 11th European Conference on Solid-State Transducers,Warsaw,1997年,第3卷,第1595-1598页)。为了实现与下面的基底形成密封腔的膜,还包括其他工艺步骤。膜和基板是电容式换能器的相对电极。换能器可以与驱动,前置放大和多路复用电路一起单片集成在一个芯片上,从而显着降低了寄生电容和噪声水平。由于其质量轻,换能器非常适合流体负载,因此带宽高达50-100%(C. Eccardt等人,Proceedings Ultrasonics Symposium,San Antonio,Vol.2,1996,pp。959)。 -962; PC Eccardt等,《 1997年超声学研讨会论文集》,多伦多,第2卷,1997年,第1609-1618页。下面显示了如何修改BiCMOS工艺以满足超声产生和接收的要求。偏置和驱动电压已降低至10 V范围。现在,机电耦合几乎可以与压电换能器相媲美。测量结果显示出的声压和带宽至少可以与传统的压电换能器阵列相媲美。

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