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MFM studies of interlayer exchange coupling in Co/Ru/Co films: Effect of Ru layer thickness

机译:Co / Ru / Co薄膜中层间交换耦合的MFM研究:Ru层厚度的影响

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Antiferromagnetically coupled magnetic" thin films are promising candidates for the design of new magnetic storage and logic devices. The ability to control the interlayer thickness, therefore the magnetic reversal response, of exchange-coupled magnetic layers is of paramount importance in nanotechnology, especially in magnetic sensing element design and applications. In this work, magnetic force microscopy (MFM) with improved sensitivity and high spatial resolution probes was used to obtain a more detailed view of magnetization reversal behavior and domain evolution in the indirect exchange-coupled trilayer system: Co/Ru/Co. The effect of the variable Ru interlayer thickness on the exchange coupling and thus the magnetic domain structure during the ferromagnetic (FM)/ antiferromagnetic (AF) coupling transition in Co/Ru/Co films is well demonstrated. The MFM images display a distinct signature of AF coupling for the films with Ru thickness of 0.4 nm. MFM has proven to be an effective tool for detecting FM/AF interlayer coupling and exploring magnetic domain structures in exchange-coupled layered thin films.
机译:反铁磁耦合的磁性薄膜是新型磁存储和逻辑器件设计的有希望的候选者。控制耦合耦合的磁性层的层间厚度,从而控制磁性反转的能力在纳米技术中尤其是在磁性技术中至关重要。传感元件的设计和应用:在这项工作中,使用具有改进的灵敏度和高空间分辨率探针的磁力显微镜(MFM)来获得更详细的视图,用于间接交换耦合三层系统Co /的磁化反转行为和畴演化: Ru / Co。很好地证明了Co / Ru / Co膜中可变的Ru中间层厚度对交换耦合的影响,从而对铁磁(FM)/反铁磁(AF)耦合跃迁期间的磁畴结构产生了影响。 Ru厚度为0.4 nm的薄膜具有明显的AF耦合特征,MFM已被证明是有效的用于检测FM / AF层间耦合并探索交换耦合层状薄膜中的磁畴结构。

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