Pulsed electron-beam-pumped laser based on AlGaN/InGaN/GaN quantum-well heterostructure

摘要

The parameters of pulsed blue-violet (lambda approximate to 430 nm at T = 300 K) lasers based on an AlGaN/InGaN/GaN structure with five InGaN quantum wells and transverse electron-beam pumping are studied. At room temperature of the active element, the minimum electron energy was 9 keV and the minimum threshold electron beam current density was 8 A cm(-2) at an electron energy of 18 keV.