Progress on large area n-type silicon solar cells with front laser doping and a rear emitter

摘要

We report on the progress of imec's n-type passivated emitter, rear totally diffused rear junction silicon solar cells. Selective laser doping has been introduced in the flow, allowing the implementation of a shallow diffused front surface field and a reduction of the recombination current in the contact area. Simplifications have been implemented towards a more industrial annealing sequence, by replacing expensive forming gas annealing steps with a belt furnace annealing. By applying these improvements, together with an advanced texturing process and emitter passivation by atomic layer deposition of Al2O3, 22.5% efficient cells (three busbars) have been realized on commercial 156156mm(2) Czochralski-Si. This result has been independently confirmed by ISE CalLab. Copyright (c) 2016 John Wiley & Sons, Ltd.