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首页> 外文期刊>Progress in photovoltaics >Structure of chemically deposited Zn(S,O,OH) buffer layer and the effects on the performance of Cu(in,Ga)Se-2 solar cell
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Structure of chemically deposited Zn(S,O,OH) buffer layer and the effects on the performance of Cu(in,Ga)Se-2 solar cell

机译:化学沉积的Zn(S,O,OH)缓冲层的结构及其对Cu(in,Ga)Se-2太阳能电池性能的影响

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摘要

The effects of the immersion into a NH3 aqueous solution on the structural characteristics of the chemically deposited Zn(S,O,OH) layer and photovoltaic performance of the CIGS/Zn(S,O,OH) solar cells were investigated with structural and electrical characterizations. The as-deposited-Zn(S,O,OH) layer possessed a layered structure of upper Zn(OH)(2) and Zn(S,O) layers, and the upper Zn(OH)(2) layer was removed by the immersion. The conversion efficiency for the CIGS solar cell was improved from 6.8% to 13.7% by removing the upper Zn(OH)(2) layer during the immersion. Copyright (c) 2015 John Wiley & Sons, Ltd.
机译:通过结构和电学研究了浸入NH3水溶液中对化学沉积的Zn(S,O,OH)层的结构特征和CIGS / Zn(S,O,OH)太阳能电池的光伏性能的影响。表征。沉积的Zn(S,O,OH)层具有上层Zn(OH)(2)和Zn(S,O)的层状结构,并且上层Zn(OH)(2)层通过沉浸。通过在浸入过程中去除上部Zn(OH)(2)层,CIGS太阳能电池的转换效率从6.8%提高到13.7%。版权所有(c)2015 John Wiley&Sons,Ltd.

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