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首页> 外文期刊>Polymer Preprints >An Investigation of Aromatic and Aliphatic Fluorocarbon Polymer Films: Is Control of Film Properties Possible via Pulsed Plasma Polymerization?
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An Investigation of Aromatic and Aliphatic Fluorocarbon Polymer Films: Is Control of Film Properties Possible via Pulsed Plasma Polymerization?

机译:芳香族和脂肪族氟碳聚合物薄膜的研究:可以通过脉冲等离子体聚合控制薄膜性能吗?

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摘要

The quest for higher chip speeds is driving the search for low dielectric constant films for use as inter-level dielectrics (ILDs) in the micr-electronics industry. Organic polymeric materials are desirable for use as is because of iheir inherently low dielectric properties.1 The major drawback to polymeric thin films, however, is their low thermal stability. A key differentiating factor for thermal stability iii these materials is whether the chemical bonds that hold the material together we aromatic or aliphatic. Although plasma deposited fluorocarbon films are expected to have properties similar to bulk polytetrafluoroethylene (PTFE), continuous wave (CW) plasmas produce films with a high degree of crosslinking and F/C ratios ?2.0. Pulsed rf plasmas have recently been used to produce less crosslinked materials with specific surface properties.2'314'5 Results from our pulsed studies using C2F6/H2 plasmas indicate we can deposit less crosslinked fluorocarbon polymer films with high contact angles and CF2 fractions comparable to bulk PTFE.6 Recent studies of fluori'nated poly(arylene ether) films show these materials have a low dielectric constant, thermal stability, and low moisture absorption.1 This has motivated us to explore the use of pulsed plasmas to deposit fluorinated aromatic polymers. Deposition of films with high CF2 content or aromatic components will be important for technological applications of these materials. Recent results from pulsed plasma studies in our laboratory using both aliphatic and aromatic fluorinated monomers to deposit fluorocarbon polymers with specific properties are presented. Deposition parameters and chemical and physical properties of the deposited films will be discussed.
机译:对更高芯片速度的要求推动了对低介电常数薄膜的寻找,该薄膜可用于微电子工业中的层间电介质(ILD)。有机聚合物材料由于其固有的固有的低介电性能而被期望使用。1然而,聚合物薄膜的主要缺点是其热稳定性低。这些材料的热稳定性的关键区别因素是将材料结合在一起的化学键是芳香族还是脂肪族。尽管预计等离子体沉积的碳氟化合物膜具有与本体聚四氟乙烯(PTFE)相似的性能,但连续波(CW)等离子体产生的膜具有较高的交联度和F / C比约为2.0。脉冲射频等离子体最近已用于生产具有特定表面性质的较少交联的材料。2'314'5我们使用C2F6 / H2等离子体进行脉冲研究的结果表明,我们可以沉积较少的交联的碳氟聚合物薄膜,而其高接触角和CF2分数可与膨体聚四氟乙烯。6氟化聚亚芳基醚薄膜的最新研究表明,这些材料具有较低的介电常数,热稳定性和低吸湿性。1这促使我们探索使用脉冲等离子体沉积氟化芳族聚合物的方法。 。具有高CF2含量或芳香族成分的薄膜的沉积对于这些材料的技术应用而言至关重要。提出了在我们实验室中使用脂肪族和芳香族氟化单体沉积具有特定性质的碳氟聚合物的脉冲等离子体研究的最新结果。将讨论沉积参数以及沉积膜的化学和物理性质。

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