...
首页> 外文期刊>Plasma Sources Science & Technology >Optimizing drive parameters of a nanosecond, repetitively pulsed microdischarge high power 121.6 nm source
【24h】

Optimizing drive parameters of a nanosecond, repetitively pulsed microdischarge high power 121.6 nm source

机译:优化纳秒级重复脉冲微放电高功率121.6 nm光源的驱动参数

获取原文
获取原文并翻译 | 示例
           

摘要

Utilizing nanosecond high voltage pulses to drive microdischarges (MDs) at repetition rates in the vicinity of 1 MHz previously enabled increased time-averaged power deposition, peak vacuum ultraviolet (VUV) power yield, as well as time-averaged VUV power yield. Here, various pulse widths (30-250 ns), and pulse repetition rates (100 kHz-5 MHz) are utilized, and the resulting VUV yield is reported. It was observed that the use of a 50 ns pulse width, at a repetition rate of 100 kHz, provided 62 W peak VUV power and 310 mW time-averaged VUV power, with a time-averaged VUV generation efficiency of similar to 1.1%. Optimization of the driving parameters resulted in 1-2 orders of magnitude increase in peak and time-averaged power when compared to low power, dc-driven MDs.
机译:利用纳秒级高压脉冲以大约1 MHz的重复频率驱动微放电(MD),以前可以增加时间平均功率沉积,峰值真空紫外线(VUV)功率产量以及时间平均VUV功率产量。在这里,利用了各种脉冲宽度(30-250 ns)和脉冲重复频率(100 kHz-5 MHz),并报告了所得的VUV产量。可以观察到,以100 kHz的重复频率使用50 ns的脉冲宽度可提供62 W的峰值VUV功率和310 mW的时均VUV功率,时均VUV产生效率接近1.1%。与低功率直流驱动MD相比,驱动参数的优化导致峰值和时间平均功率增加1-2个数量级。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号