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An investigation of the temporal evolution of plasma potential in a 60 MHz/2 MHz pulsed dual-frequency capacitively coupled discharge

机译:60 MHz / 2 MHz脉冲双频电容耦合放电中等离子体电势随时间变化的研究

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Using an electron-emitting probe, time-resolved plasma potential (V _p) measurements are carried out in a pulsed dual-frequency 60 MHz/2 MHz capacitively coupled discharge. The discharge is produced using argon gas at two chosen pressures of 20 and 40 mTorr, a duty ratio of 50% and pulse powers ranging from 100 to 500W. The pulsing frequency is set at 1kHz. The plasma potential measurements are carried out at 10mm above the centre of the substrate. It is observed that V _p follows the source discharge pulse voltage and remains positive during the whole pulse cycle. Without substrate biasing, the prominent features observed in the V _p profile, under all the operating conditions, remain similar; however, the magnitude of V _p increases with the applied RF source power. For further analysis, three distinguishable features in the V _p profile, a transient spike at the beginning of the discharge pulse, a stable 'on-phase' and a 'stable-off' phase, are identified. For typical operating conditions (20 mTorr and 500 W), the transient spike in V _p of ~30 V appears for 30 μs, then it attains a stable value of ~12V during the rest of the pulse on-period. V _p decreases up to ~3V as the pulse is switched off. It is also observed in this study that a continuous wave RF biasing of the substrate significantly modulates the plasma potential evolution, specifically when the pulse is switched off and the magnitude of modulation depends on the substrate biasing power. The temporal evolution of electron temperature derived from the plasma and floating potentials is also reported.
机译:使用电子发射探头,在脉冲双频60 MHz / 2 MHz电容耦合放电中进行时间分辨的等离子体电势(V _p)测量。使用氩气在20和40 mTorr的两个选定压力,50%的占空比和100至500W的脉冲功率下产生放电。脉冲频率设置为1kHz。等离子体电势的测量是在基板中心上方10毫米处进行的。可以看出,V _p跟随源极放电脉冲电压并在整个脉冲周期内保持为正。在没有衬底偏置的情况下,在所有工作条件下,V _p轮廓中观察到的突出特征仍然相似。但是,V _p的大小随施加的RF源功率而增加。为了进一步分析,确定了V_p曲线中的三个明显特征,放电脉冲开始处的瞬态尖峰,稳定的“接通相”和“稳定断开”相。在典型的工作条件下(20 mTorr和500 W),V _p的瞬态尖峰出现30 s,持续30μs,然后在其余的脉冲周期内达到稳定的〜12V值。当脉冲关闭时,V_p降低至〜3V。在这项研究中还观察到,基板的连续波RF偏压会显着调制等离子体电势的演变,特别是在脉冲关闭且调制幅度取决于基板偏压功率的情况下。还报道了源自等离子体和浮动电位的电子温度的时间演变。

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