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Preparation and Some Properties of Cu-Te-S Thin Films on the Polyamide(PA)Surface

机译:聚酰胺(PA)表面Cu-Te-S薄膜的制备及某些性能

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摘要

The process and results of the formation of thin Cu-Te-S films on the polyamide(PA)surface are described.For clarifying the influence of various factors(the concentration of the initial solution of sodium telluropentathionate dihydrate,Na_2TeS_4O_6 dentre dot 2H_2O,pH,an exposure time and temperature)the kinetics of the sorption-diffusion of tellurium and sulfur into PA from freshly prepared solutions of sodium telluropentathionate was studied.Some structural properties and electrical resistance's values of obtained films have been investigated also.Cu-Te-S polymer composites indicate p-type properties of electrical conductivity and have electrical resistance in the range of 1.5 dentre dot 10~3-4.0 dentre dot 10~3 kOMEGA/square to 3-5 kOMEGA/square after to 2-3 h of an exposure and 1.0-1.5 kOMEGA/square after 24-72 h of exposure in 0.01-0.1 mol dm~(-3)solutions of Na_2TeS_4O_6.
机译:描述了在聚酰胺(PA)表面上形成Cu-Te-S薄膜的过程和结果。为阐明各种因素的影响(二水合五碳五磺酸钠的初始溶液的浓度,Na_2TeS_4O_6牙质点2H_2O,pH ,暴露时间和温度)研究了碲和硫从新制备的戊戊四酸钠溶液中扩散到PA中的碲和硫的吸附扩散动力学。还研究了所得薄膜的一些结构性质和电阻值.Cu-Te-S聚合物复合材料具有p型导电性能,并且在暴露2至3小时后的电阻范围为1.5 Dentre点10〜3-4.0 Dentre点10〜3 kOMEGA /平方到3-5 kOMEGA /平方在Na_2TeS_4O_6的0.01-0.1 mol dm〜(-3)溶液中暴露24-72 h后的浓度为1.0-1.5 kOMEGA /平方。

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