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首页> 外文期刊>Plasma Science & Technology >Effects of Bias Voltage on the Structure and Mechanical Properties of Thick CrN Coatings Deposited by Mid-Frequency Magnetron Sputtering
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Effects of Bias Voltage on the Structure and Mechanical Properties of Thick CrN Coatings Deposited by Mid-Frequency Magnetron Sputtering

机译:偏置电压对中频磁控溅射沉积厚CrN涂层结构和力学性能的影响

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摘要

Thick CrN coatings were deposited on Si (111) substrates by electron source assisted mid-frequency magnetron sputtering working at 40 kHz. The deposition rate, structure, and microhardness of the coatings were strongly influenced by the negative bias voltage (V-b). The deposition rate reached 8.96 mu m/h at a V-b of -150 V. X-ray diffraction measurement revealed strong CrN (200) orientation for films prepared at low bias voltages. At a high bias voltage of V-b less than -25 V both CrN (200) and (111) were observed. Large and homogeneous grains were observed by both atomic force microscopy and scanning electron microscopy in samples prepared under optimal conditions. The samples exhibited a. fibrous microstructure for a low bias voltage and a columnar structure for V-b less than -150 V.
机译:通过在40 kHz下工作的电子源辅助中频磁控溅射将厚CrN涂层沉积在Si(111)衬底上。涂层的沉积速率,结构和显微硬度受到负偏压(V-b)的强烈影响。在-150 V的V-b下,沉积速率达到8.96μm /h。X射线衍射测量表明,在低偏置电压下制备的薄膜具有很强的CrN(200)取向。在低于-25 V的V-b高偏置电压下,同时观察到CrN(200)和(111)。通过原子力显微镜和扫描电子显微镜在最佳条件下制备的样品中观察到大而均匀的晶粒。样品表现出低偏置电压的纤维状微结构,V-b小于-150 V的柱状结构。

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