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Luminescence of LaBr_3: Ce,Hf Crystals under Photon Excitation in the Ultraviolet, Vacuum Ultraviolet, and X-Ray Ranges

机译:LaBr_3:Ce,Hf晶体在紫外,真空紫外和X射线范围内的光子激发下的发光

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摘要

This study has been carried out using synchrotron radiation, time-resolved luminescence ultraviolet and vacuum ultraviolet spectroscopy, optical absorption spectroscopy, and thermal activation spectroscopy. It has been found that, in scintillation spectrometric crystals LaBr_3: Ce,Hf characterized by a low hygroscopicity, along with Ce~(3+) centers in regular lattice sites, there are Ce~(3+) centers located in the vicinity of the defects of the crystal structure. It has also been found that the studied crystals exhibit photoluminescence (PL) of new point defects responsible for a broad band at wavelengths of 500-600 nm in the PL spectra. The minimum energy of interband transitions in LaBr_3 is estimated as E_g ~ 6.2 eV. The effect of multiplication of electronic excitations has been observed in the range of PL excitation energies higher than 13 eV (more than 2E_g). Thermal activation studies have revealed channels of electronic excitation energy transfer to Ce~(3+) impurity centers.
机译:这项研究是使用同步辐射,时间分辨紫外和真空紫外光谱,光吸收光谱和热活化光谱进行的。已经发现,在以低吸湿性为特征的闪烁光谱晶体LaBr_3:Ce,Hf中,在规则晶格位点处具有Ce〜(3+)中心,在其附近存在Ce〜(3+)中心。晶体结构的缺陷。还已经发现,所研究的晶体表现出新的点缺陷的光致发光(PL),该点缺陷在PL光谱中的波长为500-600nm处具有宽带。 LaBr_3中带间转换的最小能量估计为E_g〜6.2 eV。在高于13 eV(大于2E_g)的PL激发能量范围内,已经观察到电子激发的倍增效应。热活化研究揭示了电子激发能转移到Ce〜(3+)杂质中心的通道。

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