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Photoluminescence of monoclinic Li3AlF6 crystals under vacuum ultraviolet and soft X-ray excitations

机译:Li3AlF6单斜晶体在真空紫外和软X射线激发下的光致发光

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Using Bridgman technique we have grown monoclinic beta-LiAF crystals suitable for optical studies, performed XRD-identification and Rietveld refinement of the crystal structure and carried out a photoluminescence study upon vacuum ultraviolet (VUV) and extreme ultraviolet (XUV)-excitations, using the low-temperature (T = 7.2 K) time-resolved VUV-spectroscopy technique. The intrinsic PL emission band at 340-350 nm has been identified as due to radiative recombination of self-trapped excitons. The electronic structure parameters were determined: bandgap E-g approximate to 12.5 eV, energy threshold for creation of unrelaxed excitons 11.8 eV < E-n < 12.5 eV. The PL emission bands at 320-325 and 450 nm were attributed to luminescence caused by lattice defects. We have discovered an efficient excitation of PL emission bands in the energy range of interband transitions (E-ex > 13.5 eV), as well as in the energy range of core transitions at 130 eV. We have revealed UV-VUV PL emission bands at 170 and 208 nm due to defects. A reasonable assumptions about the origin of the UV-VUV bands were discussed. (C) 2015 Elsevier B.V. All rights reserved.
机译:使用Bridgman技术,我们已经生长了适用于光学研究的单斜晶β-LiAF晶体,进行了XRD鉴定和Rietveld晶体结构的细化,并在真空紫外(VUV)和极紫外(XUV)激发下进行了光致发光研究,低温(T = 7.2 K)时间分辨VUV光谱技术。 340-350 nm的固有PL发射带已被鉴定为归因于自陷激子的辐射复合。确定了电子结构参数:带隙E-g约为12.5 eV,产生无弛豫激子的能量阈值11.8 eV 13.5 eV)以及核心跃迁的能量范围为130 eV的情况下,PL发射带得到了有效激发。由于缺陷,我们已经揭示了170和208 nm的UV-VUV PL发射带。讨论了有关UV-VUV谱带起源的合理假设。 (C)2015 Elsevier B.V.保留所有权利。

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