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Multistage radiation-stimulated changes in the microhardness of silicon single crystals exposed to low-intensity beta irradiation

机译:多级辐射刺激的低强度β辐照的硅单晶的显微硬度变化

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摘要

Radiation-stimulated and postradiation changes in the microhardness of silicon single crystals exposed to irradiation with a low-intensity flux of beta particles (I = 9 x 10(5) cm(-2) s(-1), W = 0.20 + 0.93 MeV) are studied. It is established that the inversion of the radiation-induced plastic effect occurs at a characteristic irradiation time tau(c) = 75 min; i.e., irradiation of silicon single crystals for a time tau < tau(c) leads to nonmonotonic reversible hardening, whereas nonmonotonic reversible softening is observed under irradiation for a time tau > tau(c). It is demonstrated that there exists a correlation between the nonmonotonic dependences of the microhardness and the concentration of electrically active defects at acceptor levels with energies E-c - 0.11 eV, E-c - 0.13 eV, and E-c - 0.18 eV on the irradiation time. (c) 2005 Pleiades Publishing, Inc.
机译:用低强度的β粒子通量(I = 9 x 10(5)cm(-2)s(-1),W = 0.20 + 0.93的辐照暴露的硅单晶的显微硬度的辐照刺激和辐照后变化MeV)。可以确定的是,辐射诱导的塑性效应的反转发生在特征辐射时间tau(c)= 75分钟;即,在时间tau <tau(c)的时间照射硅单晶导致非单调的可逆硬化,而在时间tau> tau(c)的辐射下观察到非单调的可逆软化。结果表明,在辐射时间上,显微硬度的非单调依赖性与能量为E-c-0.11 eV,E-c-0.13 eV和E-c-0.18 eV的受主水平电活性缺陷浓度之间存在相关性。 (c)2005年Pleiades Publishing,Inc.

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