Effect of Synthesis Conditions on the Metal–Semiconductor Phase Transition in Vanadium Dioxide Thin Films

摘要

The effect of the conditions of synthesis and of the substrate material on the metal–semiconductor phase transition in thin vanadium dioxide films prepared using laser ablation has been studied. The broadening of the hysteresis loop is shown to be due to a decrease in the size of the crystal grains making up the film. Conjectures are put forward to explain the formation of asymmetric hysteresis loops.