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Effect of deformation on the metal-semiconductor phase transition in vanadium dioxide thin films

机译:变形对二氧化钒薄膜中金属-半导体相变的影响

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摘要

It has been demonstrated that a small plastic deformation of aluminum substrates with vanadium dioxide thin films deposited on the substrate surfaces is accompanied by the appearance of elastic stresses in the films. Depending on the deformation technique, the elastic stresses can have different signs and the range of the metal-semiconductor phase transition in VO_2 shifts toward higher or lower temperatures as compared to the equilibrium phase temperature.
机译:已经证明,具有沉积在基材表面上的二氧化钒薄膜的铝基材的小的塑性变形伴随着薄膜中的弹性应力的出现。取决于变形技术,弹性应力可以具有不同的符号,并且与平衡相温度相比,VO_2中金属-半导体相变的范围朝着更高或更低的温度移动。

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