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首页> 外文期刊>Physical Review, B. Condensed Matter >QUANTUM-CONFINED STARK EFFECTS IN SEMICONDUCTOR QUANTUM DOTS
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QUANTUM-CONFINED STARK EFFECTS IN SEMICONDUCTOR QUANTUM DOTS

机译:半导体量子点中的量子限制斯塔克效应

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摘要

Quantum-confined Stark effects (QCSE) on excitons, i.e., the influence of a uniform electric field on the confined excitons in semiconductor quantum dots (QD's), have been studied by using a numerical matrix-diagonalization scheme. The energy levels and the wave functions of the ground and several excited states of excitons in CdS and CdS1-xSex quantum dots as functions of the size of the quantum dot and the applied electric field have been obtained. The electron and hole distributions and wave function overlap inside the QD's have also been calculated for different QD sizes and electric fields. It is found that the electron and hole wave function overlap decreases under an electric field, which implies an increased exciton recombination lifetime due to QCSE. The energy level redshift and the enhancement of the exciton recombination lifetime are due to the polarization of the electron-hole pair under the applied electric field. [References: 29]
机译:已经通过使用数值矩阵对角化方案研究了激子的量子限制斯塔克效应(QCSE),即均匀电场对半导体量子点(QD's)中的受激激子的影响。已经获得了CdS和CdS1-xSex量子点中的能级,基波函数和激子的几种激发态,它们是量子点大小和所施加电场的函数。还针对不同的量子点尺寸和电场计算了量子点内部的电子和空穴分布以及波函数重叠。发现在电场作用下电子和空穴波函数的重叠减少,这表明由于QCSE导致激子复合寿命增加。能级红移和激子复合寿命的增加归因于施加电场下电子-空穴对的极化。 [参考:29]

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