首页> 外文期刊>Physical Review, B. Condensed Matter >SUBPICOSECOND PHOTOCONDUCTIVITY OF IN0.53GA0.47AS - INTERVALLEY SCATTERING RATES OBSERVED VIA THZ SPECTROSCOPY
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SUBPICOSECOND PHOTOCONDUCTIVITY OF IN0.53GA0.47AS - INTERVALLEY SCATTERING RATES OBSERVED VIA THZ SPECTROSCOPY

机译:通过THZ光谱观察到的IN0.53GA0.47AS的亚光电导-谷间散射率。

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We report on the transient photoconductivity of hot carriers in undoped bulklike In0.53Ga0.47As observed via time-resolved terahertz far-infrared spectroscopy. For very dilute photoexcitation densities of <1X10(15) cm(-3) and an initial excess carrier energy of 630 meV, we find that electrons have an effective intervalley L-->Gamma return time of 3.1 ps as measured via the increased electrical conductivity associated with Gamma electrons. In contrast, a total conductivity risetime of similar to 0.5 ps is observed for electrons with initial excess energy insufficient to cause intervalley scattering. The observed frequency dependent conductivity is analyzed via the Drude theory, allowing the determination of the temporal dynamics of the mobility at dilute excitation densities of similar to 1x10(14) cm(-3). [References: 18]
机译:我们报告通过时间分辨太赫兹远红外光谱观察到的未掺杂的块状In0.53Ga0.47As中的热载流子的瞬态光电导性。对于<1X10(15)cm(-3)的非常稀的光激发密度和630 meV的初始过剩载流子能,我们发现电子具有有效的间隔L->伽马返回时间,为3.1 ps(通过增加的电势来测量)与伽马电子有关的电导率。相比之下,对于电子而言,总的电导率上升时间约为0.5 ps,初始能量不足以引起区间散射。通过Drude理论分析了观察到的与频率相关的电导率,从而可以确定稀疏激发密度类似于1x10(14)cm(-3)时迁移率的时间动态。 [参考:18]

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