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Time-resolved THz spectroscopy: Charge transfer, solvent dynamics, and photoconductivity.

机译:时间分辨太赫兹光谱:电荷转移,溶剂动力学和光电导性。

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Time-resolved THz spectroscopy (TRTS) has been applied to study the sub-picosecond (sub-ps) to nanosecond carrier dynamics in bulk semiconductors, and semiconductor nanoparticles (NPs), as well as to study the low-frequency, collective solvent dynamics in chloroform and toluene. In a TRTS experiment the evolution of the far-infrared spectrum after a visible excitation event is measured with a temporal resolution of ∼200 fs. One of the many attractive features of THz spectroscopy is it provides a non-contact electrical probe, because, the FIR spectrum is directly related to the complex conductivity. Materials whose photoconductivity changes rapidly and/or whose morphologies make attaching wires difficult will benefit from this new spectroscopic probe. There are significant challenges in interpreting TRTS data on the sub-ps timescale, and finite-difference time-domain (FDTD) calculations have proven extremely valuable in simulating and understanding TRTS experiments.; We observed a mobility that evolves on a 1–2 ps timescale in bulk GaAs and low-temperature grown GaAs (LT-GaAs). The time-dependent mobility arises from carrier cooling that occurs immediately following photoexcitation. Our results have provided an experimentally determined time-dependent mobility with sub-ps temporal resolution for the first time in these materials. We find that the mobility in LT-GaAs is smaller than in regular GaAs. The mobility for both materials conforms to a simple variant of the Drude model.; We observed a marked size-dependent mobility and carrier dynamics in CdSe NPs. The mobility is characterized by three groups, diameters larger than the bulk carrier mean free path lf, diameters smaller than lf but larger than the Bohr exciton radius aB, and diameters smaller than aB. The size-dependent dynamics show that ballistic transport occurs to the surface of the NPs where the carriers undergo trapping.; A new spectroscopic technique, charge transfer induced electromagnetic generation (CTIEG), was developed to study rapid intramolecular charge transfer events that occur on the timescale of 0.1 to 10 ps. CTIEG allows one to determine the direction of charge transfer in solution and the detailed charge-transfer dynamics are contained in the time-dependent emitted field.
机译:时间分辨THz光谱法(TRTS)已用于研究体半导体和半导体纳米粒子(NP)中皮秒至亚皮秒(sub-ps)到纳秒级的载流子动力学,以及研究低频集体溶剂动力学在氯仿和甲苯中。在TRTS实验中,以约200 fs的时间分辨率测量了可见光激发事件后远红外光谱的演化。太赫兹光谱的许多吸引人的特征之一是它提供了一种非接触式电探针,因为FIR光谱与复数电导率直接相关。光电导率快速变化和/或其形貌使连接导线困难的材料将受益于这种新型光谱探针。在sub-ps时标上解释TRTS数据存在很大的挑战,并且有限差分时域(FDTD)计算已被证明在模拟和理解TRTS实验中非常有价值。我们观察到在块状GaAs和低温生长的GaAs(LT-GaAs)中迁移率在1-2 ps的时间尺度上演化。时间依赖性迁移率是由载流子冷却引起的,该载流子冷却在光激发后立即发生。我们的结果首次在这些材料中首次提供了实验确定的时变迁移率,具有亚ps时间分辨率。我们发现,LT-GaAs中的迁移率小于常规GaAs中的迁移率。两种材料的迁移率都符合Drude模型的简单变体。我们在CdSe NP中观察到了明显的尺寸依赖性迁移率和载流子动力学。迁移率的特征是三组,直径大于散装货船平均自由程 l f ,直径小于 l f < / italic>,但大于Bohr激子半径 a B ,并且直径小于 a B 。与尺寸有关的动力学表明,弹道运输发生在载流子被俘获的NP表面。开发了一种新的光谱技术,即电荷转移感应的电磁产生(CTIEG),以研究在0.1到10 ps的时间尺度上发生的分子内快速电荷转移事件。 CTIEG可以确定溶液中电荷转移的方向,详细的电荷转移动力学信息包含在时间相关的发射场中。

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