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Effects of electron-impurity scattering on density of states in silicene: Impurity bands and band-gap narrowing

机译:电子杂质散射对硅中态密度的影响:杂质带和带隙变窄

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摘要

Considering the interband correlation, we present a generalized multiple-scattering approach of Green's function to investigate the effects of electron-impurity scattering on the density of states in silicene at zero temperature. The reduction of energy gaps in the case of relatively high chemical potential and the transformation of split-off impurity bands into band tails for low chemical potential are found. The dependency of optical conductivity on the impurity concentration is also discussed for frequency within the terahertz regime.
机译:考虑到带间相关性,我们提出了格林函数的广义多重散射方法,以研究电子杂质扩散对零温度下硅中态密度的影响。发现在相对较高的化学势的情况下能隙的减小以及对于低化学势的将分离的杂质带转变为能带尾部。太赫兹范围内的频率也讨论了光导率对杂质浓度的依赖性。

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