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Effects of electron-impurity scattering on density of states in silicene: Impurity bands and band-gap narrowing

机译:电子杂质扩散对硅中态密度的影响:杂质带和带隙变窄

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摘要

Considering the interband correlation, we present a generalized multiple-scattering approach of Green's function to investigate the effects of electron-impurity scattering on the density of states in silicene at zero temperature. The reduction of energy gaps in the case of relatively high chemical potential and the transformation of split-off impurity bands into band tails for low chemical potential are found. The dependency of optical conductivity on the impurity concentration is also discussed for frequency within the terahertz regime.
机译:考虑到带间相关性,我们提出了格林函数的广义多重散射方法,以研究电子杂质扩散对硅在零温度下状态密度的影响。发现在相对较高的化学势的情况下能隙的减小以及对于低化学势的裂解的杂质带向带尾的转变。太赫兹范围内的频率也讨论了光导率对杂质浓度的依赖性。

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  • 来源
    《Physical review. B, Condensed Matter And Materals Physics》 |2016年第23期|235308.1-235308.9|共9页
  • 作者

    S. Y. Liu; Y. C. Zeng; X. L. Lei;

  • 作者单位

    Key Laboratory of Artificial Structures and Quantum Control (Ministry of Education), Department of Physics and Astronomy, Shanghai Jiao Tong University, 800 Dongchuan Road, Shanghai 200240, China and Collaborative Innovation Center of Advanced Microstructures, Nanjing 210093, China;

    Key Laboratory of Artificial Structures and Quantum Control (Ministry of Education), Department of Physics and Astronomy, Shanghai Jiao Tong University, 800 Dongchuan Road, Shanghai 200240, China and Collaborative Innovation Center of Advanced Microstructures, Nanjing 210093, China;

    Key Laboratory of Artificial Structures and Quantum Control (Ministry of Education), Department of Physics and Astronomy, Shanghai Jiao Tong University, 800 Dongchuan Road, Shanghai 200240, China and Collaborative Innovation Center of Advanced Microstructures, Nanjing 210093, China;

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