...
机译:电子杂质扩散对硅中态密度的影响:杂质带和带隙变窄
Key Laboratory of Artificial Structures and Quantum Control (Ministry of Education), Department of Physics and Astronomy, Shanghai Jiao Tong University, 800 Dongchuan Road, Shanghai 200240, China and Collaborative Innovation Center of Advanced Microstructures, Nanjing 210093, China;
Key Laboratory of Artificial Structures and Quantum Control (Ministry of Education), Department of Physics and Astronomy, Shanghai Jiao Tong University, 800 Dongchuan Road, Shanghai 200240, China and Collaborative Innovation Center of Advanced Microstructures, Nanjing 210093, China;
Key Laboratory of Artificial Structures and Quantum Control (Ministry of Education), Department of Physics and Astronomy, Shanghai Jiao Tong University, 800 Dongchuan Road, Shanghai 200240, China and Collaborative Innovation Center of Advanced Microstructures, Nanjing 210093, China;
机译:电子杂质散射对硅中态密度的影响:杂质带和带隙变窄
机译:P型Cuin_(1-x)ga_x(s,se)_2的杂质诱导带隙变窄
机译:窄带隙半导体中深缺陷状态的从头算研究:PbTe中的Ⅲ族杂质
机译:首次原则计算掺杂的二氧化钛的带隙变窄的协同作用:密度泛函理论研究
机译:利用金属有机气相外延合成窄带隙III-V族半导体。
机译:有机-无机三卤化物钙钛矿同时带隙变窄和载流子寿命延长
机译:电子杂质散射对纳米态密度的影响 硅质:杂质带和带隙变窄
机译:稀alLi中的各向异性电子 - 杂质散射:局部密度近似的(小)校正