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Energetics, electronic structure and local magnetism of single 3d impurity in GaAs

机译:GaAs中单一3d杂质的能级,电子结构和局部磁性

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摘要

A real-space first-principles method based on density functional theory has been used to study the energetics, the electronic structure and the magnetic property of single 3d impurity in a GaAs host (with Ga substituted by Cr, Mn, Fe, Co, and Ni, respectively). It is found that Mn exhibits the largest exchange splitting in 3d orbitals, while Fe, Co, and Ni are almost nonmagnetic. The calculated substitutional formation energies are 3.87, 3.21, 1.36, 1.41, 0.37 eV, and the calculated local magnetic moments are 3.25, 4.26, -0.01, -0.03 and -0.01 AB, for Cr, Mn, Fe, Co and Ni, respectively. For a good understanding on the local magnetism of the 3d impurity, we analyzed the bonding characteristics and the charge transfer property in detail, and found that the hybridizations between 3d impurity and its neighboring As atoms play an important role. (C) 2004 Elsevier B.V. All rights reserved.
机译:基于密度泛函理论的实空间第一原理方法已被用于研究GaAs主体(Ga被Cr,Mn,Fe,Co和Co取代)中的3d杂质的能级,电子结构和磁性能。 Ni)。发现Mn在3d轨道上表现出最大的交换分裂,而Fe,Co和Ni几乎是非磁性的。对于Cr,Mn,Fe,Co和Ni,计算出的替代形成能分别为3.87、3.21、1.36、1.41、0.37 eV,并且计算出的局部磁矩分别为3.25、4.26,-0.01,-0.03和-0.01 AB。 。为了更好地了解3d杂质的局部磁性,我们详细分析了键合特性和电荷转移性质,发现3d杂质与其相邻的As原子之间的杂化起着重要作用。 (C)2004 Elsevier B.V.保留所有权利。

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