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首页> 外文期刊>IEEE transactions on very large scale integration (VLSI) systems >On the impact of on-chip inductance on signal nets under the influence of power grid noise
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On the impact of on-chip inductance on signal nets under the influence of power grid noise

机译:电网噪声影响下片上电感对信号网的影响

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摘要

It has been well recognized that the impact of on-chip inductance on some critical nets, such as clock nets, is significant and cannot be ignored in delay modeling for these nets. However, the impact of on-chip inductance on signal nets in general is still not well understood. We present results of analyzing inductive effects on signal nets for ultradeep submicron technologies under the influence of power grid noise. The analysis is based on an Al-based 0.18-/spl mu/m CMOS process and a Cu-based 0.13-/spl mu/m CMOS process. The impact of on-chip inductance is shown to be insignificant if we assume a perfect power supply network around the interconnect routes. Otherwise, the impact of on-chip inductance can be significant. Furthermore, the results presented in this paper illustrate the impact of on-chip inductance one would expect from transitioning from an Al-based interconnect technology to a Cu-based interconnect technology. A heuristic method is proposed in the paper to account for the inductive coupling due to power grid noise in signal delay modeling and simulations.
机译:众所周知,片上电感对某些关键网络(例如时钟网络)的影响是巨大的,在这些网络的延迟建模中不能忽略。但是,总体上,片上电感对信号网络的影响仍然尚不清楚。我们介绍分析在电网噪声影响下超深亚微米技术对信号网的感应效应的结果。该分析基于基于Al的0.18- / spl mu / m CMOS工艺和基于Cu的0.13- / spl mu / m CMOS工艺。如果我们假设互连路径周围有一个完善的电源网络,那么片上电感的影响将被证明是微不足道的。否则,片上电感的影响可能会很大。此外,本文提出的结果说明了从基于Al的互连技术过渡到基于Cu的互连技术时,人们所期望的片上电感的影响。本文提出了一种启发式方法来解决信号延迟建模和仿真中电网噪声引起的感应耦合。

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