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A Highly-Integrated 3–8 GHz Ultra-Wideband RF Transmitter With Digital-Assisted Carrier Leakage Calibration and Automatic Transmit Power Control

机译:具有数字辅助载波泄漏校准和自动发射功率控制的高度集成的3–8 GHz超宽带RF发射机

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This paper presents a highly-integrated 3–8 GHz ultra-wideband (UWB) RF transmitter implemented in a 1.2 V 0.13-$mu$m CMOS technology. The transmitter integrates an analog baseband (PGAs and filter), an IQ modulator, a variable gain amplifier (VGA), a differential-to-single-ended amplifier, a power amplifier, as well as a transmitted signal strength indicator (TSSI). The RF VGA and the TSSI cooperate to perform an automatic transmit power control. The IQ modulator and an off-chip digital circuit implemented by a FPGA perform a carrier leakage calibration. Measured maximum output power and OP1 dB are $-$5 and $+$1.5 dBm, respectively. Measured worst carrier leakage suppression is 21 dB (before calibration) at 6.6 GHz. Measured worst sideband suppression is 29.1 dB at 7.6 GHz. The high linearity and accurate IQ modulation lead to an error vector magnitude (EVM) of $-$28 dB under the data rate of 480 Mb/s in WiMedia Mode 1. The entire transmitter consumes 66 mW under supply voltage of 1.2 V.
机译:本文介绍了采用1.2 V 0.13μmCMOS技术实现的高度集成的3–8 GHz超宽带(UWB)RF发射机。该发射器集成了模拟基带(PGA和滤波器),IQ调制器,可变增益放大器(VGA),差分至单端放大器,功率放大器以及发射信号强度指示器(TSSI)。 RF VGA和TSSI协作执行自动发射功率控制。 IQ调制器和由FPGA实现的片外数字电路执行载波泄漏校准。测得的最大输出功率和OP1 dB分别为$-$ 5和$ + $ 1.5 dBm。在6.6 GHz时,测得的最严重载波泄漏抑制为21 dB(校准前)。在7.6 GHz处测得的最差边带抑制为29.1 dB。高线性度和精确的IQ调制在WiMedia模式1下的480 Mb / s的数据速率下导致$-$ 28 dB的误差矢量幅度(EVM)。在1.2 V的电源电压下,整个发射机的功耗为66 mW。

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