首页> 外文期刊>Very Large Scale Integration (VLSI) Systems, IEEE Transactions on >A 5.8 nW 9.1-ENOB 1-kS/s Local Asynchronous Successive Approximation Register ADC for Implantable Medical Device
【24h】

A 5.8 nW 9.1-ENOB 1-kS/s Local Asynchronous Successive Approximation Register ADC for Implantable Medical Device

机译:适用于可植入医疗设备的5.8 nW 9.1-ENOB 1-kS / s本地异步逐次逼近寄存器ADC

获取原文
获取原文并翻译 | 示例

摘要

This brief presents a 10-bits successive approximation register analog-to-digital converter (ADC) with a sampling rate of 1 kS/s for implantable medical devices. This ADC is implemented in a 65-nm CMOS process in which leakage current will be a key design parameter. It imposes the highest degree of simplicity in the design of the ADCs architecture. Thus, the transistor count is minimized, which reduces not only the active power, but also the number of leakage sources. The modified top-plate $V_{rm cm}$ -based switching offers energy efficient switching at the capacitive-DAC (CDAC) and uses simple control logic. In addition, the proposed asymmetrical metal-oxide-metal capacitor reduces the size of the CDAC by 90% for a given gain error. Furthermore, the input referred offset voltage of the dynamic comparator can be improved by the top-plate $V_{rm cm}$ -based switching method at system level without using any additional transistor. The other building blocks are also simplified for lower power consumption. This ADC occupies an area of 0.046 ${rm mm}^{2}$ . At 0.9 V and 1 kS/s, the 10-bits ADC consumes 5.8 nW, in which, 2.34 nW is contributed by leakage power consumption. The ADC achieves 9.1-ENOB and an energy efficiency of 10.94-fJ/conversion step.
机译:本简介介绍了用于植入式医疗设备的10位逐次逼近寄存器模数转换器(ADC),采样速率为1 kS / s。该ADC采用65nm CMOS工艺实现,泄漏电流将成为关键的设计参数。它在ADC架构的设计中实现了最高程度的简化。因此,晶体管数量被最小化,这不仅减少了有功功率,而且减少了泄漏源的数量。修改后的顶板 $ V_ {rm cm} $ 基于开关的电容式开关可实现节能开关DAC(CDAC),并使用简单的控制逻辑。此外,对于给定的增益误差,建议的不对称金属氧化物金属电容器可将CDAC的尺寸减小90%。此外,可以通过顶板 $ V_ {rm cm} $ 的切换方法,而无需使用任何其他晶体管。其他构造块也得到了简化,以降低功耗。该ADC占用0.046 $ {rm mm} ^ {2} $ 的面积。在0.9 V和1 kS / s时,10位ADC的功耗为5.8 nW,其中2.34 nW是由泄漏功耗引起的。该ADC达到9.1-ENOB,转换效率为10.94-fJ /转换步长。

著录项

相似文献

  • 外文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号